A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga₂O₃ heterojunction

Abstract Crucial commercial and space applications require the detection of broadband ultraviolet (UV) rays spanning from UV-A to UV-C. In this study, authors demonstrate a UV photodetector employing p-type NiO x layer an n-type β -Ga 2 O 3 heterostructure in PIN configuration for first time. Simulations are conducted optimize doping concentration thickness layer, ensuring that (a) reasonable depletion width is maintained within UV-B light absorption; (b) anode ohmic contacts formed on nondepleted NiOx film, (c) >70% UV-C absorbed by . The optimized / photodiode exhibits good responsivity incident wavelengths UV-A, UV-B, regions. While considered be responsible providing photoresponsivity regions, highly resistive (near-intrinsic) required absorption light. A record detectivity >10 11 cm Hz 0.5 W −1 regions 10 region observed during self-powered operation. results presented study promising instigate device design strategies (ultra)wide bandgap semiconductor-based photodetectors.